P/N + Description + Content Search
Part Name(s) : MRF607
Microsemi Corporation
Description : RF & MICROWAVE DISCRETE LOW POWER TransistorS
Part Name(s) : 2SC3022
MITSUBISHI ELECTRIC
Description : NPN EPITAXIAL PLANAR TYPE (RF POWER Transistor)
Part Name(s) : 2SC3022 C3022
New Jersey Semiconductor
Description : NPN EPITAXIAL PLANAR TYPE (RF POWER Transistor)
Part Name(s) : BFY90
Microsemi Corporation
Description : RF & MICROWAVE DISCRETE LOW POWER TransistorS
Part Name(s) : 2SC3379 C3379
MITSUBISHI ELECTRIC
Description : NPN EPITAXIAL PLANAR TYPE (RF POWER Transistor)
Part Name(s) : 2SC3022 C3022
Mitsumi
Description : NPN EPITAXIAL PLANAR TYPE (RF POWER Transistor)
Part Name(s) : 2SC3021 C3021
MITSUBISHI ELECTRIC
Description : NPN EPITAXIAL PLANAR TYPE (RF POWER Transistor)
Part Name(s) : BFY90
Advanced Power Technology
Description : RF & MICROWAVE DISCRETE LOW POWER TransistorS
Part Name(s) : 2N5481
American Microsemiconductor
Description : NPN UHF POWER Amplifier Transistor
Part Name(s) : MRF607
Advanced Power Technology
Description : RF & MICROWAVE DISCRETE LOW POWER TransistorS
Part Name(s) : 2N4427
Advanced Semiconductor
Description : RF & MICROWAVE DISCRETE LOW POWER TransistorS
Part Name(s) : 2N4427
Microsemi Corporation
Description : RF & MICROWAVE DISCRETE LOW POWER TransistorS
Part Name(s) : 2N2857
Microsemi Corporation
Description : RF & MICROWAVE DISCRETE LOW POWER TransistorS
Part Name(s) : 2N4427
New Jersey Semiconductor
Description : RF & MICROWAVE DISCRETE LOW POWER TransistorS (Rev - V2)
Part Name(s) : 2N2857
Advanced Power Technology
Description : RF & MICROWAVE DISCRETE LOW POWER TransistorS
Part Name(s) : MPSH10 MPSH10-TA
Jiangsu Changjiang Electronics Technology Co., Ltd
Description : TO-92 Plastic-Encapsulate Transistors
Part Name(s) : CSC1730
Continental Device India Limited
Description : NPN SILICON EPITAXIAL RF Transistor
Part Name(s) : 2SC3302 C3302
Toshiba
Description : TOSHIBA Transistor SILICON NPN EPITAXIAL PLANAR TYPE